Monte Carlo method investigation for the transportation of sputtered material atoms from target to substrate

Abstract

Sputtering as a method for depositing films has received increased
attention, as has the investigation of the connection between film qualities
and deposition parameters. With the application of Monte Carlo
simulation codes represented by SRIM (Stopping and Range of Ion in
Matter) and SIMTRA (Simulation of the Metal Transport) software’s, the
effect of divers parameters on the surface structure of thin films are
studied in 3D form with the magnetron sputtering process. Inside a
vacuum chamber a 10 5 particles of Argon (Ar) gas are injected, the target
contained the semi-conductor silicon (Si), and the substrate is placed with
a variable distance from the target. The results obtained in this work show
that a high temperature, pressure and a long distance between the target
and substrate can negatively affects the path of the atoms ejected away
from the target which will cause a decrease in the number of atoms
arriving on the substrate.